3D Simulation was carried out and compared with fabricated ZnO NWFET. The device had the following electrical output characteristics: mobility value of 10.0 cm^2/Vs at a drain voltage of 1.0 V, threshold voltage of 24 V, and subthreshold slope (SS) of 1500 mV/decade. The simulation showed that the device output results are influenced by two main issues: (i) contact resistance (Rcon ≈ 11.3 MΩ) and (ii) interface state trapped charge number density (QIT = 3.79 x 10^15 cm-2). The QIT was derived from the Gaussian distribution that depends on two parameters added together. These parameters are: an acceptor-like exponential band tail function gGA(E) and an acceptor-like Gaussian deep state function gTA(E). By de-embedding the contact resistance, the
simulation is able to improve the device by producing excellent field effect mobility of 126.9 cm^2/Vs.

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