Journal article

Effects of surface passivation on top-down ZnO nanowire transistors


Research Areas

Currently no objects available


Publication Details

Author list: N.M.J. Ditshego, K. Sun, I. Zeimpekis, P. Ashburn, M.R.R. de Planque, H.M.H. Chong

Publication year: 2015

Journal acronym: MEE

Volume number: 145

Start page: 91

End page: 95

Number of pages: 5

ISSN: 0167-9317

Languages: English



We fabricated unpassivated and passivated zinc oxide (ZnO) nanowire field effect transistors (NWFETs) using conventional top-down method of remote plasma atomic layer deposition and anisotropic dry etch. This paper investigates the effect of Al2O3 passivation on the electrical characteristics of the ZnO NWFETs. Measured unpassivated ZnO NWFETs show a threshold voltage of 6.5 V, drain current on/off ratio of 10^6 and field effect mobility of 31.4 cm^2/V s. Passivated ZnO NWFETs demonstrate threshold voltage shift to 10 V, drain current on/off ratio of 10^4 and improvement of mobility of 35.5 cm^2/V s. The passivated device results indicate suitability for biosensing applications.


Projects

Currently no objects available


Keywords

Currently no objects available


Documents

Currently no objects available


Last updated on 2024-21-11 at 15:42